@ ENEx DCR1473SY/DCR1473sV CURVES 10000 Measured u 田 4000 3 phase 8000 T;=125℃ 6000 598 钿锺日 1000 2000 3000 4000 nstantaneous on-state voltageⅥr·(V) Mean on-state current, IT(AV)-(A) Fig 2 Maximum(limit)on-state characteristics ig. 3 Power dissipation curves Table gives pulse power PG(PK in Watts Pulse width 10 =25℃ 125°C 0.001 0.1 10 Gate trigger current IGT-(A) Fig. 4 Gate characteristics www.dynexsemi.comDCR1473SY / DCR1473SV 5/9 www.dynexsemi.com 0 1000 2000 3000 4000 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Mean power dissipation - (W) dc 1/2 wave 3 phase 6 phase CURVES Fig. 2 Maximum (limit) on-state characteristics Fig. 3 Power dissipation curves Fig. 4 Gate characteristics 0.5 1.0 1.5 Instantaneous on-state voltage VT - (V) 0 2000 4000 6000 8000 10000 Instantaneous on-state current IT - (A) Measured under pulse conditions Tj = 25˚C Tj = 125˚C 0.001 0.01 0.1 1 10 Gate trigger current IGT - (A) 100 10 1 0.1 Gate trigger voltage VGT - (V) 100W 50W 20W 10W 5W 2W Tj = 125˚C Tj = -40˚C Tj = 25˚C Upper limit 99% VFGM IFGM Lower limit 1% Pulse width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Pulse frequency Hz Table gives pulse power PG(PK) in Watts