·1522· 北京科技大学学报 第33卷 Silicon from Silicon Tetrachloride and Zinc:China Patent, [13]Yamase H,Kamachi Y.Apparatus and Method for Manufacturing CN101497441A.20090805 High-purity Silicon for Solar Cell by Gas-phase Reduction of Sili- (大石直明，桥本明.四氯化硅和锌制备高纯硅的方法：中 con Tetrachloride:Japan Patent,JP2007112691A.2007-0-21 国，CN101497441A.2009-08-05) [14]Honda S,Yasueda M,Hayashida S,et al.Production Process for [2]Shimamune T.Apparatus for Manufacturing Highpurity Silicon High Purity Polycrystal Silicon and Production Apparatus for the by Reduction of Silicon Tetrachloride with Zinc:Japan Patent, Same:USA Patent,US2007123011A.200741-03 JP2008115066A.2008009北 京 科 技 大 学 学 报 第 33 卷 Silicon from Silicon Tetrachloride and Zinc: China Patent， CN101497441A． 2009-08-05 ( 大石直明，桥本明． 四氯化硅和锌制备高纯硅的方法: 中 国，CN101497441A． 2009--08--05) ［12］ Shimamune T． Apparatus for Manufacturing High-purity Silicon by Reduction of Silicon Tetrachloride with Zinc: Japan Patent， JP2008115066A． 2008-10-09 ［13］ Yamase H，Kamachi Y． Apparatus and Method for Manufacturing High-purity Silicon for Solar Cell by Gas-phase Reduction of Sili￾con Tetrachloride: Japan Patent，JP2007112691A． 2007-10-21 ［14］ Honda S，Yasueda M，Hayashida S，et al． Production Process for High Purity Polycrystal Silicon and Production Apparatus for the Same: USA Patent，US2007123011A． 2007-11-03 ·1522·