5SDF05D2505 On-state(see Fig. 2, 3) lFAVM Max average on-state current 420 a Half sine wave, Tc=85C IFRMs Max RMS on-state current 670A lFSM Max peak non-repetitive 8.5 ka t 10 ms Before surge surge current 27 ka tp 1msT=T=125°c Jl'dt Max surge current integral 036105A3stp= 10 ms After surg 03610°A2stp= 1 ms VR=OV Forward voltage drop ≤23V|F 1000A Threshold voltage 1.7V Approximation for T=125.C Slope resistance 062mg2=500.3500A Turn-on(see Fig 4, 5) Peak forward recovery voltage s16vdt:50455-1250 Turn-off (see Fig. 6 to 11) Reverse recovery current s470 a dildo=3004s,=700A Reverse recovery charge ≤840心c|T=125°c VM=2300V Turn-off energy 0.34J Cs= 2uF(GTO snubber circuit) Thermal (see Fig. 1) Operating junction temperature range -40..125°C Storage temperature range -40..125°C Thermal resistance junction to case s 80 KKW Anode side cooled ≤80KKw「 Cathode side cooled 40 Kkw Double side cooled 10.12kN Rthch Thermal resistance case to heatsink s 16 Kk Single side cooled 8 KkW Double side cooled Analytical function for transient thermal impedance. 3 Zmc(t=∑R(1-e) RI(KkW) 9510.57 71 1.33 (S) 000900044 Fm=10.12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 2 of 65SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 2 of 6 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 420 A IFRMS Max. RMS on-state current 670 A Half sine wave, Tc = 85°C IFSM Max. peak non-repetitive 8.5 kA tp = 10 ms Before surge: surge current 27 kA tp = 1 ms Tc = Tj = 125°C 0.36⋅106 A2
I s tp = 10 ms After surge: 2 dt Max. surge current integral 0.36⋅106 A2 s tp = 1 ms VR ≈ 0 V VF Forward voltage drop ≤ 2.3 V IF = 1000 A VF0 Threshold voltage 1.7 V Approximation for rF Slope resistance 0.62 mΩ IF = 500…3500 A Tj = 125°C Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 16 V di/dt = 500 A/µs, Tj = 125°C Turn-off (see Fig. 6 to 11) Irr Reverse recovery current ≤ 470 A Qrr Reverse recovery charge ≤ 840 µC Err Turn-off energy ≤ 0.34 J di/dt = 300 A/µs, IF = 700 A, Tj = 125°C, VRM = 2300 V, CS = 2µF (GTO snubber circuit) Thermal (see Fig. 1) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled RthCH Thermal resistance case to heatsink ≤ 16 K/kW Single side cooled Fm = 10… 12 kN ≤ 8 K/kW Double side cooled Analytical function for transient thermal impedance. i 12 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Z (t) = R (1 - e ) n i 1 - t / thJC
i = τ i Fm = 10… 12 kN Double side cooled