RRM 2500V 420A Fast Recovery Diode FSM 8.5kA 17V 5SDF05D2505 062mg DClink 1500V YA1114-03 Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500V Half sine wave, tp=10 ms, f=50 Hz RRM Repetitive peak reverse current ≤ 50 mA VR= VRRM T=125C VoClink Permanent DC voltage for 100 FIT failure rate 1500V 100% Duty Ambient cosmic radiati VoClink Permanent DC voltage for 100 FIT failure rate 5%Du I sea level in open air. n at Mechanical data(see Fig 12) 10 kN Mounting force max 12 KN Acceleration. Device unclamped 50m/s Device clamped 200m/s 0.25kg Surface creepage distance > 30 mm Air strike distance 20 mm ABB Semiconductors AG reserves the right to change specifications without notice. ARABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 2500 V IFAVM = 420 A IFSM = 8.5 kA VF0 = 1.7 V rF = 0.62 mΩ VDClink = 1500 V Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters • Standard press-pack housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500 V Half sine wave, tP = 10 ms, f = 50 Hz IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM, Tj = 125°C VDClink Permanent DC voltage for 100 FIT failure rate 1500 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate V 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 12) min. 10 kN Fm Mounting force max. 12 kN a Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Fast Recovery Diode 5SDF 05D2505