2154 半导体学报 第27卷 Swp max [2]Gierkink S L J,Levantino S.Frye R C.et al.A low 4GHz phase-noise 5-GHz CMOS quadrature VCO using superhar- monic coupling.IEEE J Solid-State Circuits.2003.38 (7): 1148 [3]Li Xiaoyong.Shekhar S,Allstot D J.Gm-boosted com- mon-gate LNA and differential colpitts VCO/QVCO in 0.18-mm CMOS.IEEE J Solid-State Circuits.2005.40(12): 2609 [4]Chen H C.Wang T.Lu SS.ct al.A monolithic 5.9-GHz CMOS I/O direct-down converter utilizing a quadrature cou- pler and transformer-coupled subharmonic mixers.IEEE Mi- △S, crow Wireless Compon Lett.2006.16(4):197 Measurement Model [5 Trocdsson N.Wernchag J,Sjoland H.Differential measure. ▣S1 S2 Swp min ment and parameter extraction of symmetrical inductors. Measurement Model 0.05GHz 23rd NORCHIP Conf.2005:289 图11模型与测试的S:和S2的比较 [6 Bunch R L.Sanderson D I.Raman S.Quality factor and in- Fig.11 Comparisons of Su and Sa between model ductance in differential IC implementations.IEEE Micro- wave Magazine.2002.3(2):82 and measurements [7]Danesh M.Long J R.Hadaway R.et al.A Q-factor cnhance. ment technique for MMIC inductors in silicon technology. 物理特征.分别推导了中心抽头差分电感的单端和 IEEE Radio Frequeney Integrated Circuits(RFIC)Symposi- 差分阻抗，利用两端口S参数提取出等效RLQ参 um,1998:217 数.该方法避免一个端口加入宽带180°相移网络带 [8]Lim S F.Yeo K S.Ma J G.et al.A comprehensive study and modeling of centre-tap differentially driven single-turn inte- 来的相位误差的问题.在0.35um1P4M射频工艺 grated inductors for 10-GHz applications.Microwave and 上实现了一个中心抽头的差分叠层电感，使用去嵌 Optical Technology Letters.2003.38:182 入方法测试两端口S参数，验证了集总电路等效模 [9]Danesh M.Long J R.Differentially driven symmetric mi- 型和推导的单端和差分阻抗公式的正确性.在自激 crostrip inductors.IEEE Trans Microw Theory Tech.2002, 50(1):332 振荡频率以内，等效模型和测试结果相当吻合 [10]Jian Hongyan.Tang Juc.Tang Zhangwen.ct al.Scalable ground-shielded open and thru fixtures applicd to inductor 参考文献 de-embedding.Chinese Journal of Scmiconductors,2005.26 [1 Astis G D.Cordeau D.Paillot J M.et al.A 5-GHz fully inte- (8):l656(in Chinese)[营洪彦，唐珏，唐长文，等.可缩放的开 grated full PMOS low-phase-noise LC VCO.IEEE J Solid- 路通路地屏蔽电感在片测试结构去嵌入方法，半导体学报， State Circuits.2005.40(10):2087 2005.26(8):1656] Equivalent Model and Parameter Extraction of Center-Tapped Differential Inductors* Lu Lei,Zhou Feng,Tang Zhangwen,Min Hao,and Wang Junyu' State Key Laboratory of ASIC System.Fudan University.Shanghai 201203.China) Abstract:We propose a center-tapped equivalent model for center-tapped differential inductors.The single-ended and differ- ential impedances in differential applications are derived.A 2-port S-parameter measurement with the center-tap grounded is used to extract the equivalent resistance,inductance,and O-factor (RLQ).A multi-layer center-tapped differential inductor is implemented in a 0.35um 1P4M RF CMOS process.The proposed model agrees well with the experimental results below the self-resonance frequency Key words:center-tapped differential inductor;center-tapped equivalent model;parameter extraction.S-parameter;2- port EEACC:1110:1150:2140 Article ID:0253-4177(2006)12-2150-05 Project supported by the Shanghai Science Technology Committee (No.037062019)and the Shanghai Applied Material Funds (No.0425) Corresponding author.Email:junyuwang@fudan.cdu.cn Received 10 June 2006.revised manuscript received 26 July 2006 2006 Chinese Institute of Electronics半 导 体 学 报 第!"卷 图## 模型与测试的/##和/!#的比较 2DH9## &7BXCKDM7GM7T/## CGL/!# W:OY::G B7L:8 CGLB:CMFK:B:GOM 物理特征9分别推导了中心抽头差分电感的单端和 差分阻抗!利用两端口/ 参数提取出等效 /1d 参 数9该方法避免一个端口加入宽带#>$[相移网络带 来的相位误差的问题9在$Q=@#B#US3 射频工艺 上实现了一个中心抽头的差分叠层电感!使用去嵌 入方法测试两端口/ 参数!验证了集总电路等效模 型和推导的单端和差分阻抗公式的正确性9在自激 振荡频率以内!等效模型和测试结果相当吻合9 参考文献 '#( 0MODMR 4!&7KL:CF4!UCD887O,3!:OC890@NR'JTF88cDGO:N HKCO:LTF88U3-+87YNXECM:NG7DM:1& 6&-9(***,+78DLN +OCO:&DK;FDOM!!$$@!S$"#$$#!$>" '!( RD:KeDGe +1,!1:VCGODG7+!2Kc: / &!:OC89087YN XECM:NG7DM:@NR'J&3-+IFCLKCOFK:6&-FMDGHMFX:KECKN B7GD;;7FX8DGH9(***,+78DLN+OCO: &DK;FDOM!!$$=!=>""$# ##S> '=( 1D\DC7c7GH!+E:eECK+!088MO7O 4 ,9RBNW77MO:L;7BN B7GNHCO: 1)0 CGL LDTT:K:GODC8;78XDOOM 6&-)d6&- DG $Q#>N#B &3-+9(***,+78DLN+OCO:&DK;FDOM!!$$@!S$"#!$# !%$? 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