Background for Schottky barriers Mobile es electrons N Immobile hole type emiconductors have two distinct types of camers(e's and h,'s haracterized by different mobilities, concentrations, conductivities . different Fermi energies for N and P cariers scattered into dopant sites become trapped ll/703 3.155J6.l52JBackground for Schottky barriers E Mobile holes Immobile holes Mobile e’s E Low mass electrons P Immobile e’s N EF type EF type High mass holes Semiconductors have two distinct types of carriers (e’s and h’s) characterized by w different mobilities, concentrations, conductivities w different Fermi energies for N and P w carriers scattered into dopant sites become trapped 11/17/03 3.155J/6.152J 33 17