朱军等:SU-85光刻胶的应用工艺研究 Study on Application technology of SU-8 5 Photo Resist ZHU Jun, ZHAO Xiao-lin, NI Zhir ping (Information Storage Research Center, Shanghai Jiaotong University, Shanghai 200030, China) Abstract: SU-8 series photo resist is a new epoxy-negative-tone resist product. It has good light sensitivity and high aspect ratio. It is suited to application in MEMS sys tem, UV-LIGA and other thick and ultra-thick films. The processing results related to fabricate LIGA mask using SU-8 5 resist and UV exposure system are reported Key words: MEMS; High aspect ratio, SU-8 series resist, UV-LIGA (上接I3页) [2] Pithayachariyakul P Excimer laser printing with 193nm wavclength[c semiconductor International Chu. 3] Lin B]. Electromagnetic nearfield diffraction of a medium slit[J].JOSA, 1972, 62(8) [4] Hudson J A. A fast algorithm for diffraction calculations, and some application[J ] SPIE, t986, 679: 134-140 [5]Lin BJ. Optical methods for fine line lithography[]. Fine Line Lithography, North-Holland Publishing Com any,1980:107-140,157-163 物理光学(修订本)M].北京:机械工业出版社,1987(第二版):159-165 L7. D:Jule R. Lithography: 0. 18um and beyond[ J].Secondi u.9225 [8] Burggraf P. Sub-100nm features with conformable contact photolithography[J]. Solid State Technolegy April2000:26-27 Simulation and Analysis of Resolution Enhancement in Proximity Lithography by Off-axis Illumination ZHAO Yong-kai, HUANG Huijie, LU Dunwu, DU Long-lor YANG Liang-min, YUAN Cai-lai, JIANG Baocai, WANG Run-wen (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800, China) Abstract: Intensity distribution on the wafer plane in proximity printing system under off-axis illumination is derived based on the amplitude analytic expression for Fresne Kirchhoff diffraction Numerical simulations have been done under various conditions Resolution enhancement effect by off-axis illumination and its application are ana Key words: proximity lithography; excimer laser lithography; resolution enhancement off- 万方数据朱军等：SU 8 5光刻胶的应用工艺研究 Study on Application technology of SU一8 5 Photo Resist ZHU Jun，ZHAO Xiao-lin，NI Zhi—ping (Information Storage Research Center，Shanghai Jiaotong University，Shanghai 200030，China) Abstract：SU一8 series photo resist is a new epoxy—negative—tone resist product．It has good light sensitivity and high aspect ratio．It is suited to application in MEMS sys— tem，UV—LIGA and other thick and ultra-thick films．The processing results related to fabricate L1GA mask using SU一8 5 resist and UV exposure system are reported． Key words：MEMS；High aspect ratio．SU一8 series resist．UV—LIGA (j：接13页) [2]Pithayaeharlyakul P Excimer laser printing with 193nm wavdength[C 1987 [3]LinBJ．Eiectmmag|lletic near-field diffraction of amedium silt[J]．J O SA．1972，62(8) 【4]Hud．≈m J A．Afast algorithmfor diffraction calculatiorLs．and Rmle application[J]．SPIE，1986，679：134—140 [5]Lin／3』．Optical rnelhodsforfinelineIiI}ngmphy[J]Fine Line Lithography，North—Holland Publishing Com pany，1980：107—140，157—163． [6]梁铨廷．物理光学(修订本)【M]北京：机械工业出版社．1987(第二版)：／59—165． 【7：IMuleR，Lithography：0 18／an and beyond[j]，SeanioonductorIntemationa[，1998．21(2)：54—60． [8]Burggraaf P Suh·100nm features with conformable contact photolithography[J】：Solid Stare lechnology 恕)ril 2000：26—27． Simulation and Analysis of Resolution Enhancement in Proximity Lithography By Off-axis Illumination ZHAO Yong—kai，HUANG Hui-jie，LU Dun—wu，DU Long—long， YANG Liarg-min，YUAN Cai—lai，JIANG Bao-cai，WANG Run—wen (Shanghai Institute of Optics and Fine Mechanics，The Chinese Academy of Sciences，Shanghai 201800，China) Abstract：Intensity distribution on the wafer plane in proximity printing system under off-axis illLmlinati。n is derived based on the amplitude analytic expression for Fresnel— Kirchhoff diffraction．Numerical simulations have been done under various conditions Resolution enhancement effect by off—axis illumination and its application are ann。 lyzed Key words：proximity]．ithography；exeimer lair lithography；re．．mlution enhancement； off-axis illumination 万方数据