TOSHBA GT5G131 5th Generation with Vr=3.3V 11 Development Concept *** Available for 3. 3v Gate Supply **x 1)Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of maximum Icp=l30a by optimized trench gate design 3)Protection of Gate insulation layer by Zener diode between gate emitter 2/ Low Gate Drive voltage& Space merit I)Low Gate Drive Voltage( Logic Level) Available Icp=130A Control at VGE=3.0V drive New 2)Thinner SMD Package: SOP-8 Package Product Height 1.5+0.2mm: 1.0mm Benefit than DP package 3)Improvement of ESd capability between Gate emitter 13 Schedule Under Mass-producing 2003 Dec DPO54001101 7227/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** Available for 3.3V Gate Supply *** 1) Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of Maximum Icp=130A by optimized trench gate design 3) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Low Gate Drive Voltage & Space Merit 1) Low Gate Drive Voltage ( Logic Level ) Available Icp=130A Control at VGE=3.0V Drive 2) Thinner SMD Package : SOP-8 Package Height 1.5±0.2mm : 1.0mm Benefit than DP package 3) Improvement of ESD capability between Gate & Emitter [ 3 ] Schedule Under Mass-producing GT5G131 5th Generation with VGE=3.3V New Product New Product