TOSHBA GT8G132 5 h generation with Icp=150A 11 Development Concept *** New Icp=150A**X 1)Available 4.0V Gate Drive New 2)Compact Package: Foot Print Area-Just 50x60mm Product Height --1.6mm 3)High Gate Drivability due to Low Gate Charge and others by latest design rule 4) Protection of Gate insulation layer by Zener diode between gate emitter 2/ Schedule Under mass production 13/ The comparison between 5th GT8G132& 4th GT8G131( the detail is shown in page 12M13 Generation 4th Type Name GT8G132 G8G131 (I)Input Capacitance at VCE=lOV, fIMHz 2800pF 3800pF (2)VCE(sat at VGE=4V, IC=150A) 2.3V 30V at VGE=4V, IC=150A t=1.0 t=1.5 ()Swiching Speed RG51Q2) tfl.us All parameters are described by typical value 2003 Dec DPO54001101 8/228/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** New Icp=150A *** 1) Available 4.0V Gate Drive 2) Compact Package : Foot Print Area – Just 5.0×6.0mm Height -- 1.6mm 3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule 4) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Schedule Under Mass Production [ 3 ] The Comparison between 5th GT8G132 & 4th GT8G131 ( the detail is shown in page 12 ∼13 ) GT8G132 5th generation with Icp=150A New Product New Product 5th 4th GT8G132 Gt8G131 (1) Input Capacitance ( at VCE=10V, f=1MHz) 2800pF 3800pF (2) VCE(sat) ( at VGE=4V, IC=150A) 2.3V 3.0V ( at VGE=4V, IC=150A, tr=1.0µs tr=1.5µs RG=51Ω ) tf=1.6µs tf=1.9µs Generation Type Name All parameters are described by typical value. (3) Suiching Speed