C.Haase et al.Acta Materialia 80 (2014)327-340 335 RD (a) b TD win R 1um 600nm 1 um 4 (d) (e) matrix twin 8 (000) 1um Fig.8.TEM bright field micrographs of the material after:(a)30%cold rolling+recovery annealing.(b,c)40%cold rolling+recovery annealing,(d) 50%cold rolling recovery annealing;(e)selected area diffraction (SAD)pattern of(d)with [0 1 1],zone axis. (a) (61 ND 50μm 50μm >RD (d) (e) 111} 50m 001 101 Fig.9.IPF mappings of the 40%cold-rolled recovery-annealed material broken down into:(a)DEF grains,(b)RC grains,(c)RX grains and (d-f)the corresponding ODF sections at 2=45 of (a-c)(levels:1.0.2.0,3.0,4.0,5.0,6.0.7.0.8.0).1 µm (a) RD TD 600 nm (b) 1 µm RX (c) 1 µm (d) twin matrix (000) (e) Fig. 8. TEM bright field micrographs of the material after: (a) 30% cold rolling + recovery annealing, (b, c) 40% cold rolling + recovery annealing, (d) 50% cold rolling + recovery annealing; (e) selected area diffraction (SAD) pattern of (d) with [0 1 1]c zone axis. Fig. 9. IPF mappings of the 40% cold-rolled + recovery-annealed material broken down into: (a) DEF grains, (b) RC grains, (c) RX grains and (d–f) the corresponding ODF sections at u2 = 45 of (a–c) (levels: 1.0, 2.0, 3.0, 4.0, 5.0, 6.0, 7.0, 8.0). C. Haase et al. / Acta Materialia 80 (2014) 327–340 335