|2.18.2.35 Antimony Selenide s0Se3611 Ta RF Stoichlometry variable. Antimony Sulfide SD2Sa 550 4.64 ··-200G Mo,Ta Mo.Ta Al2O3 No decomposition.n-3.19,4.06.4.3 Antmony Telluride 629 6.50 600 RF Decomposes over 750C. Arsenic As 817 s 5.73 107150210 c nes rapidly at low Arsenic Oxide 312 3.74 Arsenic Selenide As2Se3 -360 4.75 Al2O3. RF Arsenic Sulfide A32S3 300 3.43 -400F Mo A203,Q RF n=2.4.2.81.3.02 Arsenic Telluride As2Te3 362 Flash JVW5T.1973:10:748. Barium Ba 725 3.51 545627735F W.Ta,Mo w Metals RF ogea Barlum Chlonide BaCl, 963 3.92 650· Ta,Mo RF Preheat gently to outgas.n1.73 Barlum Fluoride BaF2 1355 s4.89 -7006 Mo RF n=1.47 Barium Oxide Bao 1918 5.72 -1300P Pt A203 RF,RF-R Decomposes slightly.n=1.98 Barlum Sulfide BaS 1200 4.25 1100 Mo RF n=2.16 Barlum Titanate BaTiO3 、 D6.02 、 Be 1278 1.85 710 8781000 E W.Ta Beo.C.VC RF,DC Berylium Carbide Be,C ≥2100 D1.90 Beryllum Chloride BeCl2 405 1.90 -150 RF Beryllum Fluoride BeF2 800 s1.99 -200G Toxic.n =c1.33 Beryllium Oxide 2530 3.01 1900 RF,RF-R Bismuth 年 271 9.80 330 410520Ex W.Mo.Ta w Al2Og.VC DC.RF Toxic vapor.Resistivity high.No shorting of baskets. Bismuth Fluoride BF3 727 s5.32 300 Gr RF n=1.74 Bismuth Oxide Bi203 8G0 8.55 -1400P Pt Pt RF,RF-R Toxic vapor.n=1.91 Bismuth Selenide Bi2Sea 710 D6.82 650G Gr,0 R Bismuth Sulfide BS3 685 D7.39 RF n=1.34,1.46 Bismuth Telluride B2Te3 573 7.7 600 W.Mo RF Bismuth Titanate B2T207 RF Sputter or co-evaporate from two sources in 102 Torr oxygen. Boron B 2300 2.34 1278 15481797 Ex C.vC Boron Carbide B4C 2350 2.52 2500 25802650Ex RF Similar to chromium. Boron Nitride BN 3000 2.25 1600 RF,RF-R 2.18, 2.35 Antimony Selenide Sb2Se3 611 - - - - - Ta - - C RF Stoichiometry variable. Antimony Sulfide Sb2S3 550 4.64 - - ~200 G Mo, Ta - Mo, Ta Al2O3 - No decomposition. n=3.19, 4.06, 4.3 Antimony Telluride Sb2Te3 629 6.50 - - 600 - - - - C RF Decomposes over 750°C. Arsenic As 817 S 5.73 107 150 210 P C - - Al2O3 , BeO, VC - Toxic. Sublimes rapidly at low temperature. Arsenic Oxide As2O3 312 3.74 - - - - - - - - - - Arsenic Selenide As2Se3 ~360 4.75 - - - - - - - Al2O3 , Q RF - Arsenic Sulfide As2S3 300 3.43 - - ~400 F Mo - - Al2O3 , Q RF n = 2.4, 2.81, 3.02 Arsenic Telluride As2Te3 362 - - - - - Flash - - - - JVST. 1973;10:748. Barium Ba 725 3.51 545 627 735 F W, Ta, Mo W W Metals RF Wets without alloying reacts with ceramics. Barium Chloride BaCl2 963 3.92 - - ~650 - Ta, Mo - - - RF Preheat gently to outgas. n = 1.73 Barium Fluoride BaF2 1355 S 4.89 - - ~700 G Mo - - - RF n = 1.47 Barium Oxide BaO 1918 5.72 - - ~1300 P Pt - Pt Al2O3 RF, RF-R Decomposes slightly. n = 1.98 Barium Sulfide BaS 1200 4.25 - - 1100 - Mo - - - RF n = 2.16 Barium Titanate BaTiO3 - D 6.02 - - - - - - - - RF Gives Ba. Co-evap. from 2 sources or sputter. n = 2.40 Beryllium Be 1278 1.85 710 878 1000 Ex W, Ta W W BeO, C, VC RF, DC Wets W/Mo/Ta. Powder and oxides toxic. Evaporates easily. Beryllium Carbide Be2C >2100 D 1.90 - - - - - - - - - - Beryllium Chloride BeCl2 405 1.90 - - ~150 - - - - - RF - Beryllium Fluoride BeF2 800 S 1.99 - - ~200 G - - - - - Toxic. n = <1.33 Beryllium Oxide BeO 2530 3.01 - - 1900 G - - W - RF, RF-R Toxic. No decomposition from E￾beam guns. n=1.72 Bismuth Bi 271 9.80 330 410 520 Ex W, Mo, Ta W W Al2O3 , VC DC, RF Toxic vapor. Resistivity high. No shorting of baskets. Bismuth Fluoride BiF3 727 S 5.32 - - ~300 - - - - Gr RF n = 1.74 Bismuth Oxide Bi2O3 860 8.55 - - ~1400 P Pt - Pt - RF, RF-R Toxic vapor. n = 1.91 Bismuth Selenide Bi2Se3 710 D 6.82 - - ~650 G - - - Gr, Q RF Co-evaporate from two sources or sputter. Bismuth Sulfide Bi2S3 685 D 7.39 - - - - - - - - RF n = 1.34, 1.46 Bismuth Telluride Bi2Te3 573 7.7 - - ~600 - W, Mo - - Gr, Q RF Co-evaporate from two sources or sputter. Bismuth Titanate Bi2Ti2O7 - D - - - - - - - - - RF Sputter or co-evaporate from two sources in 10-2 Torr oxygen. Boron B 2300 2.34 1278 1548 1797 Ex C - - C, VC RF Explodes with rapid cooling. Forms carbide with container. Boron Carbide B4C 2350 2.52 2500 2580 2650 Ex - - - - RF Similar to chromium. Boron Nitride BN ~3000 S 2.25 - - ~1600 P - - - - RF, RF-R Decomposes under sputtering; reactive preferred