SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

本章接受一些重要的电路定理,其中有叠加定理(包括齐性定理)替代定理、戴维宁定理、诺顿定理、特勒根定理互易定理还扼要地介绍了有关对偶原理的概念

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

重点掌握有效值、平均值和平均功率的应用,掌握非正弦电流电路的计算方法

一、分别用回路法和节点法列写下图电路的方程

用Mo基合金粉末(含Si,B,Cr,W,Mo,Ni等)作为喷涂材料,利用大气等离子喷涂(APS)技术,在0Cr13Ni5Mo不锈钢基体上制备了钼基非晶纳米晶复合涂层.利用XRD观察了涂层的晶型结构,扫描电镜(SEM)观察涂层的组织形貌,恒电位扫描仪对涂层的电化学特性进行了测试,显微硬度仪测量涂层的显微硬度.实验结果表明,利用等离子喷涂工艺可以制备高硬度的Mo基非晶纳米晶复合涂层,这种涂层结构均匀致密,其显微硬度最高达到1426.9HV.孔隙率约为5.5%.非晶纳米晶复合涂层在3.5%NaCl溶液中存在钝化现象,自腐蚀电流为6.459μA·cm-2,腐蚀速度0.869mm·a-1

1.正弦量的表示、相位差; 2.正弦量的相量表示 3.电路定理的相量形式