SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

本章介绍一些重要的电路定理,其中叠加定理 (包括齐性定理)、替代定理、戴维宁定理、诺 顿定理、特勒根定理、互易定理。还扼要地 介绍了有关对偶原理的概念

5.1.1 调频信号和调相信号 5.1.2 调角信号的频谱 5.1.3 调角信号的频谱宽度 5.1.4 小结

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

10.1.1变压器副边有中心抽头的全波整流电路如图题10.1.1所示,副边电源电压为v2= sin (ot,假定忽略管子的正向压降和变压 器内阻

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003

本章主要内容： 一、电化学的研究对象和主要内容 二、电化学的形成与发展简史 三、电化学的应用领域及其进展 四、教学内容与教学安排

3.6.1 负阻器件 3.6.2 负阻振荡原理及其电路 3.6.3 用负阻观点讨论 LC 反馈振荡器