第三章直流电 3.1直流电机的工作原理和基本结构 3.2空载和负载时直流电机的磁场 3.3直流电机的感应电动势和电磁转矩 3.4直流电机的基本方程 3.5直流电动机的运行特性

6.1同步电机的基本结构和运行状态 6.2空载和负载时同步发电机的磁场 6.3隐极同步发电机的电压方程、相量图和等效电路 6.4凸极同步发电机的电压方程和相量图 6.5同步发电机的功率方程和转矩方程 6.6同步电机参数的测定 6.7同步发电机的运行特性

1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) （1)General purpose rectification （2) Surge absorption

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating