DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device
SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking