1.1 要点扫描 1.1.1 晶体材料的结合键 1.1.2 空间点阵和晶胞 1.1.3 常见纯金属（FCC、BCC、HCP）的晶体结构 1.1.4 晶面指数和晶向指数及其标注 1.1.5 标准投影 1.1.6 倒易点阵和晶体学公式 1.1.7 合金相结构 1.1.8 离子晶体结构 1.1.9 共价晶体结构 1.2 难点释疑 1.2.1 7 大晶系包含的点阵类型为什么不是 28 种，而是 14 种？ 1.2.2 为什么没有底心正方和面心正方点阵？ 1.2.3 确定晶面指数时应注意哪些问题？ 1.2.4 立方晶系中重要晶面上的晶体排列及面密度 1.2.5 立方晶系中重要方向上的晶体排列及线密度 1.3 解题示范 1.4 习题训练

2.1 要点扫描 2.1.1 点缺陷及其平衡浓度 2.1.2 位错的基本类型及柏氏矢量 2.1.3 位错的应力场 2.1.4 位错的弹性能和线张力 2.1.5 作用在位错上的力和 Peach-Koehler 公式 2.1.6 位错间的交互作用 2.1.7 位错的起动力——Peirls-Nabarro 力 2.1.8 FCC 晶体中的位错 2.1.9 位错反应 2.1.10 HCP、BCC 及其他晶体中的位错 2.1.11 晶体中的界面与表面 2.1.12 位错的观察及位错理论的应用 2.2 难点释疑 2.2.1 柏氏矢量的守恒性 2.3 解题示范 2.4 习题训练

6. 8 Diffusion Mechani sm Flick's' law in microscopic form 1. One dimensional diffusion. jump frequency period probability of atom jumping to nearest position

36. 5 concentration dependence of D. Matano method d -C- dependence ll Matano method

1. Classification y Ideal or perfect crystal real or defect crystal According to dimension o point defect: vacancies, interstitial atoms s line defect dislocation planar defect: stacking fault o volume defect mosaic structure

3. Application of Schmid's law How to determine the active S.S. for all the equivalent S.S. 2 Determine the active S.S. by Reflection Rule. Orientation cell for cubic crystals. Given: BCC Crystal having {110}slip system. Determine: active slip system in response to tensile loading along

I Introduction Silicates are compounds that mainly composed of [sio4]. It is the essential components of most rock and soil, such as quartz, feldspar, mica etc

1. The structure of am b differs from those of either a or B 2. Its composition is variable to more or lessextension 3. Mixed bonding 4. Intermediate properties

3. 1 Basic concepts of al loys 1. Definition An alloy is the combination of metal(s) with other elements through chemical bonding. Termino logy

4.9 Comparison Between Slip and Twinning Similar ity Both slip and twinning are shear process under shear stress T I. Differences 1. Orientation 2. Atom movement 3.y,△ a) Structure: Twinning is easy 4. Conditions b) Temperature da d c) Strain rate (c