6.1PM控制的基本原理 6.2PWM逆变电路及其控制方法 6.3PWM跟踪控制技术 6.4PWM整流电路及其控制方法

1.《自动控制理论》课程教学大纲 2.《单片机原理及应用》课程教学大纲 3.《现代控制理论》课程教学大纲 4.《电机及电力拖动》课程教学大纲 5.《检测技术与仪表》课程教学大纲 6.《电力电子技术课程设计》教学大纲 7.《运动控制系统》课程教学大纲 8.《过程控制系统》课程教学大纲 9.《计算机控制系统》课程教学大纲 10.《专业英语》课程教学大纲 11.《PLC 原理及应用》课程教学大纲 12.《嵌入式系统》课程教学大纲 13.《EDA技术及应用》课程教学大纲 14.《C 语言案例设计》课程教学大纲 15.《现场总线技术》课程教学大纲 16.《机器人学基础》课程教学大纲 17.《高级语言程序设计》课程教学大纲 18.《控制系统辅助仿真设计》课程教学大纲 19.《工业计算机通信与网络》课程教学大纲 20.《PLC 课程设计》教学大纲 21.《电力电子技术课程设计》教学大纲 22.《数字图像处理》课程教学大纲 23.《数据结构与算法》课程教学大纲 24.《复变函数与积分变换》课程教学大纲 25.《信号与系统》课程教学大纲 26.《模式识别与人工智能》课程教学大纲 27.《工程电磁场》课程教学大纲 28.《集散控制系统》课程教学大纲 29.《控制电机》课程教学大纲 30.《信号与系统》课程教学大纲 31.《智能控制技术》课程教学大纲 32.《文献检索与科学研究》课程教学大纲 33.《虚拟仪器》课程教学大纲 34.《计算机控制系统课程设计》教学大纲 35. 《智能控制技术课程设计》教学大纲

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

5.1换流方式 5.2电压型逆变电路 5.3电流型逆变电路 5.4多重逆变电路和多电平逆变电路

2.1单相可控整流电路 2.2三相可控整流电路 2.3变压器漏感对整流电路的影响 2.4电容滤波的不可控整流电路 2.5整流电路的谐波和功率因数 2.6大功率可控整流电路 2.7整流电路的有源逆工作状态 2.8晶闸管直流电动机系统 2.9相控电路的驱动控制

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example: