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Microelectronics Processing technology Fall Term 2003 Instructions for the microfluidics Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC and mEMs Lab reports will be used Contents: Your Letter should include the following sections y-line(Author, affiliation, and submission date)
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Microelectronics Processing technology Fall Term 2003 Instructions for the mems Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC Lab report will be used Contents: Your Letter should include the following sections
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Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections
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Microelectronics Processing Technology Spring Term, 200. Quiz 1 90 min/90 points total March 19 2003 Note: Be brief and relevant in your answers, and use sketches. Show your work. k=1.3810-23J/K=8.6210-eV/K 40 1. Film deposition, CVD )Discuss briefly what factors affect the microstructure a film grown on a substrate
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Microelectronics letters journals IEEE Electron Device letters Applied physics Letters Available online at libraries mit edu Click on vera (Virtual Electronic Resource Access)
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Processes: gift of Slo2-Expose Si to steam = uniform insulating layer or metal film growth: high vacuum, single element Contrast with CVD: toxic, corrosive gas flowing through valves
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Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel
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The lithographic Process a BasIc process Definitions Fundamentals of Exposure Exposure Systems Resists Advanced Lithography Recommended reading Plummer, chapter 5
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Alternative materials and fabrication techniques Applications in biology and chemistry Applications in medicine A real MTL example of rapid prototyping
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Why do we need metallization?- To connect devices electrically to each other and to the outside world; power and data Local interconnect doped polySi, silicides Packaging
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