STI OXide fill 1)沟槽衬垫氧化硅 2)沟槽CVD氧化物填充 Trench fill by chemical vapor deposition Thin Films Polish Trench CVD oxide Nitride Diffusion Photo Etch n-well Liner oxide p-Epitaxial layer p+ silicon substrate 半导体制造技术 电信学院微电子教研室 Figure 9.11 by michael Quirk and Julian Serda半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda STI Oxide Fill 1）沟槽衬垫氧化硅 2）沟槽CVD氧化物填充 1 2 Diffusion Polish Photo Etch Implant Thin Films p-well Trench fill by chemical vapor deposition 1 Liner oxide p+ Silicon substrate p- Epitaxial layer n-well 2 Nitride Trench CVD oxide Oxide Figure 9.11