1332 半导体学报 第26卷 (a) (b) 1.50 4 1.45 1.40 1.35 1.30 6V 1.25 1.20 1.15 3 4 4 Frequency/GHz Frequency/GHz Fig.7 Ls and Rs of the single-end spiral inductor with PNP isolation structure solation structures for inductors consisting of alter- nating patterned dual pn junctions with voltage Acknowledgments The authors would like to controlled,variable lateral and vertical depletion thank Prof.Sun Lingling,Wen Jincai,Chen Zhanfei regions are presented.The structure covers the of the Hangzhou University of Electronic Science whole area underneath an inductor and is compati- &Technology and Prof.Li Fuxiao of the Nanjing ble with standard digital CMOS process flow.The 55th Research Institute of Information Industrial THR is not equivalent to the thickness of the de- Department for measurements. pletion regions of the vertical pn junction but the depth of the bottom pn junction in the substrate. 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