Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)

Problem 1 Deal-Grove model states that the thickness of the oxide is related to a time constant r and two constants A and b by the relation

I. Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm< A <500nm. Assume NA=0.26. Recalculate on the same plot for NA=0.41. Discuss the implication of these plots for the technologist that must manufacture transistors with 0.5 um

Due Sept 17. 2002 1. a) Mean free path 2= kBI d-p where k=1.38×102,T=293K,p=10mTor=133Pa,d=1A=100m 38×10-3(293 6.9cm ford=1A Jr(m)(332)017mfrd=2A b) Use the ideal gas law pV=nkB T 1.33Pa vk7(138×102X90)33×10m-33×10cm3

Reading Assignment: Kinetics, Vac. Tech: Campbell, 10.1-1. 4(or Ohring Ch 2) 1. Consider a vacuum system at room temperature that has been pumped down to a 10 m-Torr with mostly nitrogen as determined from the residual gas analyzer. Make an in

1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition. Referring to information in the class notes and text, answer the following three questions. (Grade will depend more on how you justify your design, rather than on its

Write a compact sentence that describes the molecular origin of gas pressure, including its temperature and mass dependence. [51 A: P is due to change in momentum Ap = m Av of molecules striking a surface velocity Increases as VTm

This is an open book, take-home quiz. You are not to consult with other class members or anyone else. You may discuss the solution to this exam only with the course staff

Sputter deposition: Read Plummer Chap 9, Sections 9.2.2.2 to 9.3.10. Consider reading Ohring 1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition

Microelectronics Processing technology Fall Term 2003 Instructions for the microfluidics Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC and mEMs Lab reports will be used Contents: Your Letter should include the following sections y-line(Author, affiliation, and submission date)