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《Microelectronics Process》Microelectronic Processing

Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)
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