3.155J/6.152J MICROELECTRONICS PROCESSING TECHNOLOGY TAKE-HOME QUIZ FALL TERM 2003 1) This is an open book, take-home quiz. You are not to consult with other class members or anyone else. You may discuss the solution to this exam only with the course staff 2) The quiz is due on Wednesday, November 12, AT THE START OF CLASS. Late exams will not be graded 3)There are parts of this quiz which will have more than one correct answer. Explain your answers, showing how and why you arrived at your solution either with analytical expressions, written explanations, or both 4)Reference any source of specific material parameters, which includes title of article or book, journal, author and page number. For the class texts, you can simply indicate: Plummer, pg # You may find it faster and easier to use charts rather than equations, but in some situations that may not be possible and the theoretical equations(eg Deal-Grove)must be used. Assume intrinsic diffusion 5) Justify any assumptions(and you will certainly have to make some). Indicate where you make assumptions or approximations 6) Some questions require qualitative answers. Keep them brief and focused on the most significant features 7)GRADING: The submitted material should be clearly written and concise. The grader will spend a maximum of 30 minutes grading each submission. Poorly written, or overly voluminous reports will therefore be penalized
_____________________________________________________________ 3.155J / 6.152J MICROELECTRONICS PROCESSING TECHNOLOGY TAKE-HOME QUIZ FALL TERM 2003 1) This is an open book, take-home quiz. You are not to consult with other class members or anyone else. You may discuss the solution to this exam only with the course staff. 2) The quiz is due on Wednesday, November 12, AT THE START OF CLASS. Late exams will not be graded. 3) There are parts of this quiz which will have more than one correct answer. Explain your answers, showing how and why you arrived at your solution either with analytical expressions, written explanations, or both. 4) Reference any source of specific material parameters, which includes title of article or book, journal, author and page number. For the class texts, you can simply indicate: Plummer, pg. #. You may find it faster and easier to use charts rather than equations, but in some situations that may not be possible and the theoretical equations (eg. Deal-Grove) must be used. Assume intrinsic diffusion. 5) Justify any assumptions (and you will certainly have to make some). Indicate where you make assumptions or approximations. 6) Some questions require qualitative answers. Keep them brief and focused on the most significant features. 7) GRADING: The submitted material should be clearly written and concise. The grader will spend a maximum of 30 minutes grading each submission. Poorly written, or overly voluminous reports will therefore be penalized. 1
PRO MSTATEMENT Y been hired(based on your performance in 3. 155/6. 152 and a strong desire to move to a warm climate)to develop the process flow for a new vertical power MOSFET that a company in Austin, Texas would like to market. You must design a process and figure out how to build it using their existing fabrication facility. Attached to this problem statement you will find i a typical process flow sheet ii)A description of the microfabrication facility iii)a description of the vertical power MOSFEt and the desired process specifications Part 1 Develop a process flow for the fabrication of this device. Write your process description in the same form as the sample process flow attached, with supporting calculations appended. You need not worry about control wafers. Also included in the process flow should be rough cross- sectional drawings of the wafer at various steps in the process. In generating the process flow sheet, you will find that some steps will depend on future steps, and hence some iteration will be needed. Justification should be provided for all assumptions Part 2 Draw the masks that would be needed to fabricate a device with the desired specifications Include the bonding pads that will be used for packaging of the device. You should indicate the exact dimensions. What is the maximum number of devices/wafer? Part 3 Draw an exact cross-section of your device, with the masks generated in Part 2 Part 4 plasma etching to define the vertical MOSFET, and sketch the resulting deviching rather than out performin ng calculations, write a process flow which utilizes KOh advantages and disadvantages of the two processes Notes regarding implants and diffusions: 1)Assume that the silicon dioxide/ silicon interface is reflecting for the dopants (i.e there is no diffusion across the boundary) 2) To simplify calculations, choose implant conditions such that the implant may be treated as an impulse of dopant at the surface for subsequent diffusions 3)Assume all diffusions are intrinsic and non-interacting 4)Intrinsic Diffusion Coefficients in Silicon(cm /s). Neglect diffusion at temperatures below 900C. If you need a diffusion coefficient at another temperature, extrapolate using these numbers and assuming an exponential temperature behavi 900°C 1000°C 1100°C Arsenic 2x10-1 4x10-15 5x10-14 Boron 8x10162x10-14 2x10-13 Phosphorus 8x1016 lx10-14 lx10-13
PROBLEM STATEMENT You have been hired (based on your performance in 3.155/6.152 and a strong desire to move to a warm climate) to develop the process flow for a new vertical power MOSFET that a company in Austin, Texas would like to market. You must design a process and figure out how to build it using their existing fabrication facility. Attached to this problem statement you will find: i) A typical process flow sheet. ii) A description of the microfabrication facility. iii) A description of the vertical power MOSFET and the desired process specifications. Part 1. Develop a process flow for the fabrication of this device. Write your process description in the same form as the sample process flow attached, with supporting calculations appended. You need not worry about control wafers. Also included in the process flow should be rough crosssectional drawings of the wafer at various steps in the process. In generating the process flow sheet, you will find that some steps will depend on future steps, and hence some iteration will be needed. Justification should be provided for all assumptions. Part 2. Draw the masks that would be needed to fabricate a device with the desired specifications. Include the bonding pads that will be used for packaging of the device. You should indicate the exact dimensions. What is the maximum number of devices/wafer? Part 3. Draw an exact cross-section of your device, with the masks generated in Part 2. Part 4. Without performing calculations, write a process flow which utilizes KOH etching rather than plasma etching to define the vertical MOSFET, and sketch the resulting device. Compare advantages and disadvantages of the two processes. Notes regarding implants and diffusions: 1) Assume that the silicon dioxide / silicon interface is reflecting for the dopants (i.e. there is no diffusion across the boundary). 2) To simplify calculations, choose implant conditions such that the implant may be treated as an impulse of dopant at the surface for subsequent diffusions. 3) Assume all diffusions are intrinsic and non-interacting. 4) Intrinsic Diffusion Coefficients in Silicon (cm2/s). Neglect diffusion at temperatures below 900°C. If you need a diffusion coefficient at another temperature, extrapolate using these numbers and assuming an exponential temperature behavior. 900°C 1000°C 1100°C Arsenic 2x10-16 4x10-15 5x10-14 Boron 8x10-16 2x10-14 2x10-13 Phosphorus 8x10-16 1x10-14 1x10-13 2
TYPICAL PROCESS FLOW SHEET Starting Material: 6"diameter, (100)silicon(n-type, 1014 cm-3), 700 um thick Steps 1) RCa clean Grow SiO2 Desired Thickness=250 A, Temp=1000 C, Time=20 minutes Ambient= Dry 02. This oxide is to minimize channeling during the implant step Implant back-side of wafer to improve back-side contact. Energy =100 keV Dose=5x105 cm-2, Element=Phosphorus 4) Timed etch in BOE (Buffered Oxide Etch) to remove oxide Rate=1000 A/min,Time 35 seconds. (Includes 20 second over-etch to ensure completion. 5) RCA clean 6) Grow SiO2 Thickness=1000A, Temp=950 C, Time=20 minutes Ambient=Wet O2. This oxide is used to mask the implants in steps 9 and 12 7) Photolithography- Mask #1. Dark Field 8 Timed etch in BOE (Buffered Oxide Etch) to pattern oxide Rate=1000 A/min, Time 80 seconds. End this process step with a photoresist strip Implant front-side of wafer with a n-type dopant. Energy =50 keV, Dose=2. 6x1014 cm-2 Element= Arsenic 10) Photolithography- Mask #2. Dark Field 11) Timed etch in BOE(Buffered Oxide Etch)to pattern oxide Rate=1000 A/min, Time 80 seconds. End this process step with a photoresist strip 12) Implant front-side of wafer with a p-type dopant. Energy =20 keV Dose=5x1012 cm-2 Element=Boron 3) Timed etch in BOE (Buffered Oxide Etch) to remove all oxide Rate=1000 A/min 80 seconds 14) RCA clean 15)Grow SiO2 Thickness=1000 A, Temp =1100 C, Time=40 minutes Ambient=Dry 02. To facilitate hand calculations of the diffusion, we assume the Si/SiO2 boundary is stationary when determining junction depths 16) Dopant Drive-In. Temp=1100C, Time =1. 2 hours, Ambient=N2 17) Deposit LPCVD Polysilicon. The poly will be in-situ doped with Phosphorus Thickness 5000 A Temp =600C. (We neglect diffusion during this deposition. 18) Photolithography -Mask #3. Clear field 19) Etch polysilicon in SF6 plasma ( Assume infinite selectivity with oxide ) End this process step with a photoresist strip 20) Strip polysilicon from back-Side in SF6 plasma
TYPICAL PROCESS FLOW SHEET Starting Material: 6" diameter, (100) silicon (n-type, 1014 cm-3), 700 µm thick Steps: 1) RCA clean 2) Grow SiO2. Desired Thickness = 250 Å, Temp = 1000°C, Time = 20 minutes, Ambient = Dry 02. This oxide is to minimize channeling during the implant step. 3) Implant back-side of wafer to improve back-side contact. Energy = 100 keV , Dose = 5x1015 cm-2, Element = Phosphorus. 4) Timed etch in BOE (Buffered Oxide Etch) to remove oxide. Rate = 1000 Å/min, Time = 35 seconds. (Includes 20 second over-etch to ensure completion.) 5) RCA clean 6) Grow SiO2. Thickness = 1000Å, Temp = 950°C, Time = 20 minutes , Ambient = Wet O2 . This oxide is used to mask the implants in steps 9 and 12. 7) Photolithography - Mask #1. Dark Field 8) Timed etch in BOE (Buffered Oxide Etch) to pattern oxide. Rate = 1000 Å/min, Time = 80 seconds. End this process step with a photoresist strip. 9) Implant front-side of wafer with a n-type dopant. Energy = 50 keV, Dose = 2.6x1014 cm-2, Element = Arsenic. 10) Photolithography - Mask #2. Dark Field 11) Timed etch in BOE (Buffered Oxide Etch) to pattern oxide. Rate = 1000 Å/min, Time = 80 seconds . End this process step with a photoresist strip. 12) Implant front-side of wafer with a p-type dopant. Energy = 20 keV , Dose = 5x1012 cm-2, Element = Boron. 13) Timed etch in BOE (Buffered Oxide Etch) to remove all oxide. Rate = 1000 Å/min, Time = 80 seconds . 14) RCA clean 15) Grow SiO2. Thickness = 1000 Å, Temp = 1100°C, Time = 40 minutes Ambient = Dry O2 . To facilitate hand calculations of the diffusion, we assume the Si/SiO2 boundary is stationary when determining junction depths. 16) Dopant Drive-In. Temp = 1100°C, Time = 1.2 hours, Ambient = N2 . 17) Deposit LPCVD Polysilicon. The poly will be in-situ doped with Phosphorus. Thickness = 5000 Å Temp = 600°C. (We neglect diffusion during this deposition.) 18) Photolithography - Mask #3. Clear field. 19) Etch polysilicon in SF6 plasma. (Assume infinite selectivity with oxide.) End this process step with a photoresist strip. 20) Strip polysilicon from back-side in SF6 plasma. 3
MICROFABRICATION FACILITY 3000 ft2 Class 100 cleanroom including 500 ft2 Class 10 photolithography bay 18 gpm DI Water Plant(18MQ2-cm at point of use, teflon distribution system) N2, Ar, and H2, and O2 gas plant with welded Ss distribution system 1000 ft2 testing and packaging area including automatic parametric tester, die-bond and wire-bonding machines, and a plastic injection molding machine CAD System for process modelling and mask layout(masks are made at a local vendor using a tape generated from the CAd system) All equipment is designed for 6"silicon wafers, and a vendor of silicon wafers is available who can supply any dopant type, concentration, and orientation needed. Process Equipment RCA Clean station Acid Station Solvent station 8 furnac 1. Gate Oxidation(N2, Dry O2) 2. General Purpose Oxidation(N2, Dry and Wet 02) 3. Solid source boron doping 4. Solid source phosphorous doping 5. Dopant drive-in 6. Metal Sinter(400C) 7. LPCVD Silicon Nitride(785.C, Growth Rate=2000 A/hour) 8. LPCVD Polysilicon(625.C, Growth Rate =0.5um/hour, in-situ doping Epitaxial Silicon available through a local vendor(1100 C, Growth Rate=1000A/min,n- type or p-type doping from 1014 cm-3 to 1019 cm-3) Plasma Etcher(gases for Si, SiO2, and Si3N4 etching) Plasma Deposition System(for SiO2-400oC) Ion Implantation(available through a local vendor across the street) Deposition System Full photolithography system gher min. feature size =2 um alignment tolerance =+2 um Photoresist Spinner, Develop Station, Ovens, and Plasma Stripper Optical Microscopes, Ellipsometer, Dektak surface profiler, Sheet Resistivity Monitor
MICROFABRICATION FACILITY • 3000 ft2 Class 100 cleanroom including 500 ft2 Class 10 photolithography bay • 18 gpm DI Water Plant (18MΩ-cm at point of use, teflon distribution system) • N2, Ar,and H2, and O2 gas plant with welded SS distribution system • 1000 ft2 testing and packaging area including automatic parametric tester, die-bond and wire-bonding machines, and a plastic injection molding machine. • CAD system for process modelling and mask layout (masks are made at a local vendor using a tape generated from the CAD system) • All equipment is designed for 6” silicon wafers, and a vendor of silicon wafers is available who can supply any dopant type, concentration, and orientation needed. Process Equipment: RCA Clean station Acid Station Solvent Station 8 furnaces: 1. Gate Oxidation (N2, Dry 02) 2. General Purpose Oxidation (N2, Dry and Wet 02) 3. Solid source boron doping 4. Solid source phosphorous doping 5. Dopant drive-in 6. Metal Sinter (400°C) 7. LPCVD Silicon Nitride (785°C, Growth Rate = 2000 Å/hour) 8. LPCVD Polysilicon (625°C, Growth Rate = 0.5µm/hour, in-situ doping capability) Epitaxial Silicon available through a local vendor (1100°C, Growth Rate = 1000Å/min, ntype or p-type doping from 1014 cm-3 to 1019 cm-3) Plasma Etcher (gases for Si, SiO2, and Si3N4 etching) Plasma Deposition System (for SiO2 - 400°C) Ion Implantation (available through a local vendor across the street) Aluminum Sputter Deposition System Full photolithography system: Contact Aligner min. feature size = 2 µm alignment tolerance = ±2 µm Photoresist Spinner, Develop Station, Ovens, and Plasma Stripper Optical Microscopes, Ellipsometer, Dektak surface profiler, Sheet Resistivity Monitor 4
Ⅴ ERTICAL POWER MOSFET Description A representative cross-section of this device is shown below. Specifications for th device are given below. The layout should be one which minimizes the total device size n+ Polysilicon Gate NMOS Source Junction Depth=1 um Channel Doping=1016 cm Substrate Doping=1020 cm-3 Oxide Thickness= 1000 A Channel length=5 um W/L=10.000 Bonding Pads=200 um x 200 um Polysilicon Thickness =0.5 um Aluminum Thickness=1 um Surface Concentration at Metal-Silicon Contacts>1019 cm-3 Cross-section(not to scale): Source/ Bulk Contact Gate Contac Polysilicon Thermal Oxide Aluminum
VERTICAL POWER MOSFET Description: A representative cross-section of this device is shown below. Specifications for the device are given below. The layout should be one which minimizes the total device size. n+ Polysilicon Gate NMOS Source Junction Depth = 1 µm Channel Doping = 1016 cm-3 Substrate Doping = 1020 cm-3 Oxide Thickness = 1000 Å Channel Length = 5 µm W/L = 10,000 Bonding Pads = 200 µm x 200 µm Polysilicon Thickness = 0.5 µm Aluminum Thickness = 1 µm Surface Concentration at Metal-Silicon Contacts > 1019 cm-3 Cross-section (not to scale): Source/Bulk Contact Aluminum Polysilicon Thermal Oxide n+ Silicon n+ p+ Gate Contact p n+ Source Gate Drain Drain Contact 5
