In this lab session, the cantilever and fixed-fixed beams will be mechanically tested to determ material and device performance characteristics. The structures will be mechanically loaded the corresponding deflection measured. From the load versus deflection curves, an effective

Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections

This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

How small would you like to go?...and can you go? with semiconductors?. with lithography 6.12J/3.155J Microelectronic processing Semiconductor scaling drivers: Speed of light in global interconnects, vac/vK Increased information density

Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP

lasma enhanced surface diffusion without need for Dry etching Momentum transfer from plasma to remove surface species e We will see evaporation: Evaporate

Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross

Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel