P17倒数第7行:ACB-+ACB P21(2.3)式-+ P(A:n41)=P(4)P(A),1≤i,≤N且≠j P(A∩A∩Ak)=P(4)P(A)P(A),1≤i,j,k≤N且互异 P(A1nA2…∩AN)=P(41)P(A2)…P(AN) P28倒数第7行:即若--+即

一维紧束缚近似下,晶体中电子在恒定电场作用下的运动规律一维紧束缚近似下:E'(k)=-J-2J cos ka--第i个能带

一、稳定裕度(适用最小相位系统-开环稳定系统) 工程上将GH曲线离开(-1,j0)的远近程度,叫稳定裕度,它是在频率域内衡量系统相对稳定性的指标。 曲线离(-1,j0)点的距离从两方面考虑:

一、稳定裕度(适用最小相位系统-开环稳定系统) 工程上将GH曲线离开(-1,j0)的远近程度,叫稳定裕度,它是在频率域内衡量系统相对稳定性的指标。 曲线离(-1,j0)点的距离从两方面考虑:

Fault Aware Systems: Model-based Programming and Diagnosis Brian C. Williams 16.412J/6.834J March 8th, 2004 courtesy of JPL Four launches in 7 months MERS CSAIL

Temporal Planning in Space Brian C. Williams 16.412J/6.834J based on \Handling Time: February 23rd, 2004 Constraint-based Interval Planning,\ by David E. Smith Outline Operational Planning for the Mars Exploration Rovers

Gas flux across concentration gradient: J=h(Cg-Cs ), Cs=concentration at surface Flux for chemical reaction: J(#/vol s)=k Cs, where k=koexp[-AG/(kBT)I Film growth velos/ hk ii where Nr is number of deposited species/cm Diffusio

Some useful equations for Quiz# 2 Constants:kB=1.38×1023J/K=862×105eV/K,e=16×101Coul I atm=760 Torr=10 Pa Ideal gas: Pv=NkBT N/=n=C(concentration), J

Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections