TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

第一篇混合信号电路板的设计准则 模拟电路的工作依赖连续变化的电流和电压。数字电路的工作依赖在接收端根据预先定 义的电压电平或门限对高电平或低电平的检测,它相当于判断逻辑状态的“真”或“假”。在数 字电路的高电平和低电平之间,存在“灰色”区域,在此区域数字电路有时表现出模拟效应, 例如当从低电平向高电平(状态)跳变时,如果数字信号跳变的速度足够快,则将产生过冲和 回铃反射现象

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

7.1软开关的基本概念 7.2软开关电路的分类 7.3典型的软开关电路

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002