This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step
How small would you like to go?...and can you go? with semiconductors?. with lithography 6.12J/3.155J Microelectronic processing Semiconductor scaling drivers: Speed of light in global interconnects, vac/vK Increased information density
Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP
lasma enhanced surface diffusion without need for Dry etching Momentum transfer from plasma to remove surface species e We will see evaporation: Evaporate
Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross
Microelectronics letters journals IEEE Electron Device letters Applied physics Letters Available online at libraries mit edu Click on vera (Virtual Electronic Resource Access)
Why spend a whole lecture on oxidation of Si? Ge has high ue, Wh, Ge stable but no oxide GaAs has high ue and direct band Why sio? Sio, is stable down to 10 9 Torr. T>900C Sio can be etched with hf which leaves si unaffected
