Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections

This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

How small would you like to go?...and can you go? with semiconductors?. with lithography 6.12J/3.155J Microelectronic processing Semiconductor scaling drivers: Speed of light in global interconnects, vac/vK Increased information density

Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP

lasma enhanced surface diffusion without need for Dry etching Momentum transfer from plasma to remove surface species e We will see evaporation: Evaporate

Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross

Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel

Microelectronics letters journals IEEE Electron Device letters Applied physics Letters Available online at libraries mit edu Click on vera (Virtual Electronic Resource Access)