31551/6152 J Lecture12 MEMS Lab Testing Prof martin a schmidt Massachusetts Institute of Technology 10/20/2003
3.155J/6.152J Lecture 12: MEMS Lab Testing Prof. Martin A. Schmidt Massachusetts Institute of Technology 10/20/2003
Information on Quiz Wednesday oct. 22, in-class Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross Fall 2002-Prepared by r o Handley Content somewhat different from this term Fall 2003-MA schmidt 315516.152]- Lecture12-side2
Information on Quiz Wednesday, Oct. 22, in-class Closed Book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each A formula sheet will be provided Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 – Prepared by C. Ross Fall 2002 – Prepared by R. O’Handley Content somewhat different from this term Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 2
Outline Review of the process and Testing Mechanics Cantilever Fixed-Fixed beam Second-order effects Residual stress Support compliance References Senturia, microsystems design Kluwer Fall 2003-MA schmidt 3. 155] 6.152]-Lecture 12-Slide 3
Outline Review of the Process and Testing Mechanics Cantilever Fixed-Fixed Beam Second-order effects Residual stress Support compliance References Senturia, Microsystems Design, Kluwer Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 3
The process- Lab 1 Grow 1. Oum of Si-Rich Silicon Nitride (siny LPCVD Process details to follow Characterize Uv1280) Thickness Refractive index Fall 2003-MA schmidt 3. 155].152]-Lecture 12-Slide 4
The Process – Lab 1 Grow 1.0 Pm of Si-Rich Silicon Nitride (SiN x) LPCVD Process (details to follow) Characterize (UV1280) Thickness Refractive index Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 4
The process- Lab 1 Pattern transfer Deposit photoresist Expose on contact aligner Plasma etch using SF6 Chemistr Strip resist Fall 2003-MA schmidt 315516.152]- Lecture12-side5
The Process – Lab 1 Pattern Transfer Deposit photoresist Expose on contact aligner Plasma etch using SF6 chemistry Strip resist Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 5
The process- Lab 2 KOH Undercut etch 20%,80C Fall 2003-MA schmidt 315516.152]- Lecture12-side6
The Process – Lab 2 KOH Undercut Etch 20%, 80C Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 6
The process- Lab 3 Break the wafer into die Mount the die on a metal plate Test using the Hysitron Nanoindenter Fall 2003-MA schmidt 3.155J 6. 152]-Lecture 12-Slide 7
The Process – Lab 3 Break the wafer into die Mount the die on a metal plate Test using the Hysitron Nanoindenter F w Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 7
Testing Cantilever Youngs Modulus Fixed-Fixed beams Young s modulus Residual stress Fall 2003-MA schmidt 315516.152]- Lecture12-side8
Testing Cantilever Young’s Modulus Fixed-Fixed Beams Young’s Modulus Residual Stress Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 8
The mask Beam length □口□口□ 写凹 501002005001000 Beam length Fall 2003-Ma schmidt 315516.152]- Lecture12-side9
The Mask Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 9
The mask- Cantilevers Beam Length 20 50 100 200 200 Fall 2003-Ma schmidt 315516.152- Lecture12-side10
The Mask - Cantilevers Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 12 – Slide 10