一、单项选择题(本大题共 10 小题,每小题 1 分,共 10 分) 1-5. D C A C A; 6-10. D A B C A 二、多项选择(本大题共 10 小题,每小题 1.5分,共 15分) 1.ABCD; 2.ABC; 3.ABC; 4.BCD; 5.ABCD 6、ABC 7、ABC 8、ABC 9、ABC 10、AB
Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)