行向量组a1=(a1,a2…,am),i=1,2,…,m可以构成矩阵称矩阵A是由向量组α1,Q2,…,αm所构成的矩阵,而向量组α1,α2,…,αm称为矩阵A的行向量组

微型计算机的基本组成有三部分,即中央处理器 CPU(通常包括运算器和控制器)+存储器+输入/输出(I/O) 接口。若将组成计算机的基本部件集成在一块芯片上,则 俗称为单片微机。 80C51内部结构如图2-1所示,主要包括中央处理 器CPU(算术逻辑部件ALU、控制器等)、只读存储器 ROM、随机存取存储器RAM、定时器/计数器、并行IO 口P0~P3、串行口、中断系统以及定时控制逻辑电路等

Phase I Presurgical treatmentOrthodontics Surgical plan PhaseⅡ Surgical treatment · Mandible Maxilla PhaseⅢ Postsurgical treatment · Orthodontics

Lecture 2: Molecular Design and Synthesis of Biomaterials I: Biodegradable Solid Polymeric Materials(continued) hemistry and physical chemistry of degrading polymeric solids for biomaterials Today Theory of polymer erosion Enzymatic degradation of synthetic biomaterials Designing degradable materials Reading

5.1.变分问题的欧拉方程: 1.力学第一性原理(力学最高原理):可由它导出全部力学定律的原理或者假设。(好 比几何学中的公理) 什么原理可以作为力学第一性原理? 牛顿运动定律 达朗伯原理F+F-m=0(i=12n) 动力学虚位移原理(是一种微分变分原理,或称动力学虚位移原理或称动力学普 遍方程,在本教材又称达朗贝尔方程;在静力学情况下是虚位移原理,或称虚功 原理。)

Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel

Sputter deposition: Read Plummer Chap 9, Sections 9.2.2.2 to 9.3.10. Consider reading Ohring 1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition

Some useful equations for Quiz# 2 Constants:kB=1.38×1023J/K=862×105eV/K,e=16×101Coul I atm=760 Torr=10 Pa Ideal gas: Pv=NkBT N/=n=C(concentration), J

Gas flux across concentration gradient: J=h(Cg-Cs ), Cs=concentration at surface Flux for chemical reaction: J(#/vol s)=k Cs, where k=koexp[-AG/(kBT)I Film growth velos/ hk ii where Nr is number of deposited species/cm Diffusio

Band 3 Practice Exercise I.GRAMMAR Directions: There are 80 sentences in this exercise. Beneath each sentence there are four choices. Choose the word or phrase that you think best completes the sentence