22.1双稳态触发器 22.2寄存器 22.3计数器 22.4单稳态触发器 22.5多谐振荡器

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

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Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

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