4.1交流调压电路 4.2其他交流电力控制电路 4.3交交变频电路 4.4矩阵式变频电路

5.1换流方式 5.2电压型逆变电路 5.3电流型逆变电路 5.4多重逆变电路和多电平逆变电路

.1.1电力电子器件概述 1.2不可控器件二极管 1.3半控型器件晶闸管 1.4典型全控型器件 1.5其他新型电力电子器件 1.6力电子器件的驱动 1.7电力电子器件的保护 1.8电力电子器件的串联和并联使用

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The

The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency

§1. 数字化制造系统的基本组成与分类 §2. 数字化制造系统中的典型硬件简介 §3. 数字化制造系统中的典型软件简介 §4. 数字化制造系统设计 §5. 数字化管理系统 §6. 数字化工厂

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device