Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

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1 测量及测量方法 2 现代电气测量系统的基本组成 3 测量系统的静态特性 4 测量系统的动态特性 5 电气测量系统的主要技术指标

1 测量及测量方法 2 现代电气测量系统的基本组成 3 测量系统的静态特性 4 测量系统的动态特性 5 电气测量系统的主要技术指标

6.1PM控制的基本原理 6.2PWM逆变电路及其控制方法 6.3PWM跟踪控制技术 6.4PWM整流电路及其控制方法