TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

8.1间接交流变流电路 8.2间接直流变流电路

L Electrically Isolated Package 5500A Pressure Contact Construction T(AV)(per arm) 190A International Standard Footprint 3000v Alumina(non-toxic)Isolation Medium

MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

Rectifier Diode: Current vs Mounting area

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

9.4通信电缆线路常用施工图纸 9.4.1.通信电缆线路工程——主干电缆工程施工图 9.4.2主干电缆线路工程——管路图 9.4.3主干电缆工程——总配线架及交接箱上列图