Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

1、如图所示的电容式传感器属于哪种传感器结构？ 2、误差分为几类？它们与准确度、精密度有什么关系？引用误差的定义和作用？

本章学习目的及要求 弦交流电路的基本理论和基本分析 方法是学习电路分析的重要内容之一,应 很好掌握。通过本章的学习,要求理解正 弦交流电的基本概念:熟悉正弦交流电的 表示方法:深刻理解相量的概念,牢固掌 握单一参数及非单一参数的一般正弦交流 电路的分析与计算方法

一、定义 磁敏传感器是基于磁电转换原理的传感器。1856年发现磁阻效应， 1879年发现霍尔效应60年代初开始应用。 二、分类 体型：霍尔传感器，磁敏电阻 结型：磁敏二极管，磁敏晶体管

附B元器件清单 序号名称 型号及规格单数量封装形式 变压器 副边双12V只 接成电压为24V 12334 整流桥 lA、100V QAO制作封装

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type