1 Induction Recall the principle of induction: Principle of Induction. Let P(n) be a predicate. If ·P(0) is true,an for all nE N, P(n) implies P(n+1), then P(n) is true for all nE N As an example let's try to find a simple expression equal to the following sum and then use induction to prove our guess correct 1·2+2·3+3:4+…+n·(mn+1) To help find an equivalent expression, we could try evaluating the sum for some small n and(with the help of a computer) some larger n sum
Key to practice exercise I. GRAMMAR 1.C 2.A在 hope,Ibet结构后的that-分句中可使用一般现在时表示将来的动作。如: bet it rains tomorrow. 3.B.主句中若有 require, demand, suggest insist order, prefer, propose recommend, request等动词,其后的that分句中应使用be型虚拟式,即动次原形或 should+动词原形
地球内部过程 Tsunamis海啸 and Coastal Flooding Coastal areas, especially around the Pacific Ocean basin where so many large earthquakes occur, may also be vulnerable易于to tsunamis
Microelectronics Processing Technology Spring Term, 200. Quiz 1 90 min/90 points total March 19 2003 Note: Be brief and relevant in your answers, and use sketches. Show your work. k=1.3810-23J/K=8.6210-eV/K 40 1. Film deposition, CVD )Discuss briefly what factors affect the microstructure a film grown on a substrate
Microelectronics Processing technology Fall Term 2003 Instructions for the mems Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC Lab report will be used Contents: Your Letter should include the following sections
Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP
We saw how dopants were introduced into a wafer by using diffusion (predepositionanddrive-in') This process is limited cannot exceed solid solubility of dopant -difficult to achieve light dopin Ion implantation is preferred because controlled, low or high dose can be
Why spend a whole lecture on oxidation of Si? Ge has high ue, Wh, Ge stable but no oxide GaAs has high ue and direct band Why sio? Sio, is stable down to 10 9 Torr. T>900C Sio can be etched with hf which leaves si unaffected
Review Conditional pdf Let(Y1,., YN) have joint pdf f(31,.. JN). Let f(3J+1, .. yN)be the marginal pdf of(y+1,……,YN). The conditional pdf of y1,…, Y, given y+1,…, YN is defined by
