附B元器件清单 序号名称 型号及规格单数量封装形式 变压器 副边双12V只 接成电压为24V 12334 整流桥 lA、100V QAO制作封装

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

一、实验目的 了解等电聚焦的原理。通过蛋白质等电点的测定，掌握聚丙烯酰胺凝胶垂直管式等电聚焦电泳技术

2.1 集成电路运算放大器 2.2 理想运算放大器 2.3 基本线性运放电路 2.4 同相输入和反相输入放大电路的其他应用

一、了解三相交流电动机的调速方法; 二、掌握三相交流电动机的降电压调速,转子回路串电阻调速,变极调速,变频调速的基本原理

一、课程名称：模拟电子技术(1) 课程负责人：张 玲 Analogy Electronics Technology(1) 二、学时与学分：72+8 学时, 4.5 学分 三、适用专业：电子工程、通信工程、生物医电专业 四、课程教材：谢嘉奎编.电子线路(线性部分)第四版 . 高教出版社，1999