DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

分级起动电阻的计算 设对应转速n1、n2、n3时电势分别为Ea1、Ea2、Ea3，则有：

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

10.1.1变压器副边有中心抽头的全波整流电路如图题10.1.1所示,副边电源电压为v2= sin (ot,假定忽略管子的正向压降和变压 器内阻

3.3 电路中的谐振 3.3.1 串联谐振 3.3.2 并联谐振 3.4 网络的频率特性 — 转移函数 3.4.1 转移函数的幅频特性和相频特性 3.4.2 低通电路、高通电路 3.4.3 波特图

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003

The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

3.1.1测得某放大电路中BJT的三个电极A、B、c的对地电位分别为a=-9v,VB= 6V,Vc=-6.2V,试分析A、B、C中哪个是基极b、发射极e、集电极c,并说明此BJT是NPN 管还是PNP管

一、电磁现象 二、空载电流： （1）作用和组成 一方面：用来励磁，建立磁场-----无功分量二方面：供变压器空载损耗-------有功分量