5.3金属电导 5.3.3压力对材料电阻的影响 5.3.4固溶体的导电性 5.3.5金属间化合物

一、填空(本题25分) 1.共射共集共基 2.饱和区截止区放大区正偏反偏 3.锗PP集电基射 4.提高降低加宽减小增大 5.多级放大电路单级放大电路

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

[例题14.1]一平行板电容器的两极板都是半径为5.0cm的圆导体片设充电 后电荷在极板上均匀分布,两极板间电场强度的时间变化率为 dEdt=2.0× 10Vms.试求:(1)两极板间的位移电流ld;(2)两极板间磁感应强度的 分布和极板边缘处的磁感应强度

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003

1.半导体电导率 在一般电场情况下,半导体的导电服从欧姆定律:j=E--为电导率 半导体中可以同时有两种载流子,将电流密度写成:j=nq+pqv ,分别为空穴和电子在外场下获得的平均漂移速度 —平均漂移速度和外场的关系:

2.1 系统原理方案设计 2.2 系统结构方案设计 2.3 机电系统总体设计方案的过程