The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

2.1单相可控整流电路 2.2三相可控整流电路 2.3变压器漏感对整流电路的影响 2.4电容滤波的不可控整流电路 2.5整流电路的谐波和功率因数 2.6大功率可控整流电路 2.7整流电路的有源逆工作状态 2.8晶闸管直流电动机系统 2.9相控电路的驱动控制

听觉是一种经过大脑皮层分析的感觉,其由传音结构和感音器官构成,上述两个系统中任何部位因损伤或疾病导致结构或功能障碍,均可以引起听力下降。听力测试是通过声音刺激听觉器官得出的数据来显示听觉系统病变的技术。其目的是通过测试了解听觉功能状态,鉴别听力障碍的类型和程度。听力测试分为主观和客观两种方法

.1.1电力电子器件概述 1.2不可控器件二极管 1.3半控型器件晶闸管 1.4典型全控型器件 1.5其他新型电力电子器件 1.6力电子器件的驱动 1.7电力电子器件的保护 1.8电力电子器件的串联和并联使用

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

实验应力分析 ——利用实验的方法，测定构件的应力或应变的技术。 重要性：（1）是固体力学三大支柱（理论分析、数值计算、实验）之一。 （2）复杂的工程问题，当无法进行理论分析或误差太大时，直接实验的结果最为有效

10.1通信网结构的发展 10.2光传送网结构分层与WDM网的物理通道 10.3光交叉连接设备 10.3波长变换技术

(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003