2.1单相可控整流电路 2.2三相可控整流电路 2.3变压器漏感对整流电路的影响 2.4电容滤波的不可控整流电路 2.5整流电路的谐波和功率因数 2.6大功率可控整流电路 2.7整流电路的有源逆工作状态 2.8晶闸管直流电动机系统 2.9相控电路的驱动控制

.1.1电力电子器件概述 1.2不可控器件二极管 1.3半控型器件晶闸管 1.4典型全控型器件 1.5其他新型电力电子器件 1.6力电子器件的驱动 1.7电力电子器件的保护 1.8电力电子器件的串联和并联使用

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency

15.1割集 15.2关联矩阵、回路矩阵、割集矩阵 15.3*矩阵A、B、Q之间的关系 15.4回路电流方程的矩阵形式 15.5结点电压方程的矩阵形式 15.6割集电压方程的矩阵形式 15.7列表法

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com