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Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET
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Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking
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Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating
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Rectifier Diode: Current vs Mounting area
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Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating
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8.1间接交流变流电路 8.2间接直流变流电路
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1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) (1)General purpose rectification (2) Surge absorption
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1、定子部分:定子包括机座、主磁极、换向极和电刷装置等
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第一节 概述 第二节 电流电压保护整定计算
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2.1 电力拖动系统的运动方程和负载转矩特性 2.2 他励直流电动机的机械特性 2.3 他励直流电动机的起动 2.4 他励直流电动机的制动 2.5 他励直流电动机的调速 2.6 串励直流电动机的电力拖动
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