Rectifier Diode: Current vs Mounting area

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

L Electrically Isolated Package 5500A Pressure Contact Construction T(AV)(per arm) 190A International Standard Footprint 3000v Alumina(non-toxic)Isolation Medium

MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002

1、静电场的环路定理 2、电势，电势能 3、电势的计算

Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

 1 电磁波的辐射  2 天线概念、分类及应用  3 滞后位  4 电基本振子的辐射场  5 磁基本振子的辐射场  6 天线的电参数  7 对称线天线和天线阵的概念

 1 恒定电流的电场  2 磁场与磁感应强度  3 磁通连续性原理  4 真空中的安培环路定律  5 磁介质的磁化与安培环路定律的一般形式  6 恒定磁场的基本方程和边界条件  7 磁标位  8 电感  9 磁场能量

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency