TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

1.半导体电导率 在一般电场情况下,半导体的导电服从欧姆定律:j=E--为电导率 半导体中可以同时有两种载流子,将电流密度写成:j=nq+pqv ,分别为空穴和电子在外场下获得的平均漂移速度 —平均漂移速度和外场的关系:

电网相间短路的方向性电流保护（PPT讲稿）双侧电源网络相间短路的方向性电流保护

光电效应: 光照射某些金属时能从表面释放出电子的效应 产生的电子称为光电子 光电效应是赫兹在1887年发现的.1896年汤姆逊发现了电 子之后,勒纳德证明了光电效应中发出的是电子

1.电偶极子模型 模型 光通过物质时,物质中的原子、离子或分子的电荷在入射光电矢量作用下做受迫振动

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

13.1电力系统 13.2工业企业配电 13.3安全用电

The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The

一、（1）√ （2）× （3）× （4）× 二、（a）加集电极电阻 Rc及放大电路输入端的耦合电容