The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

5.1换流方式 5.2电压型逆变电路 5.3电流型逆变电路 5.4多重逆变电路和多电平逆变电路

2.1单相可控整流电路 2.2三相可控整流电路 2.3变压器漏感对整流电路的影响 2.4电容滤波的不可控整流电路 2.5整流电路的谐波和功率因数 2.6大功率可控整流电路 2.7整流电路的有源逆工作状态 2.8晶闸管直流电动机系统 2.9相控电路的驱动控制

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The

一、填空题(每空1分,共12分) 1、晶闸管的工作状态有正向 状态,正向 状态和反向 状态。 2、某半导体器件的型号为KP507的其中KP表示该器件的名称 为,50表示,7表示