Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

 1 电磁波的辐射  2 天线概念、分类及应用  3 滞后位  4 电基本振子的辐射场  5 磁基本振子的辐射场  6 天线的电参数  7 对称线天线和天线阵的概念

 1 恒定电流的电场  2 磁场与磁感应强度  3 磁通连续性原理  4 真空中的安培环路定律  5 磁介质的磁化与安培环路定律的一般形式  6 恒定磁场的基本方程和边界条件  7 磁标位  8 电感  9 磁场能量

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

一、空载运行的物理现象： 1. 空载运行：是指变压器原绕组接到额定电压、额定频率的电源上，副绕组开路时的运行状态

与感应电机一样，同步电机也是由定子 及转子两大部分所组成，定子上有三相 交流绕组；转子上则有励磁绕组，通入 直流电流后，能产生磁场

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

The Bipolar Junction Transistor The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of electricity The term Junction is because there are two pn Junctions There are two configurations for this device n-type p-type n-type