一、内容 1、概念 2、器件

一、 填空题(10分) 二、判断题(10分) 三、选择题(20分) 四、问答题(60分)

LabVIeW应用程序的构成 即:Ⅵ的构成 前面板( Front panel) 流程图( Block Diagram) 图标/连结器(Icon/ Connector)

15,1半导体的导电特性 15.2PN结 15,3半导体二极管 15.4稳压管 15,5半导体三极管

一、概述 二、数据采集系统的构成 三、DAQ函数模块

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking