TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

8.1间接交流变流电路 8.2间接直流变流电路

MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002

L Electrically Isolated Package 5500A Pressure Contact Construction T(AV)(per arm) 190A International Standard Footprint 3000v Alumina(non-toxic)Isolation Medium

Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET