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Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity
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TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101
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Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET
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Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking
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External dimensions(Unit: mm) High frequency rectification (1)Small power mold type(PMDS) (2) Ultra low VF (3)Very fast recovery
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Rectifier Diode: Current vs Mounting area
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MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE
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Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating
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1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) (1)General purpose rectification (2) Surge absorption
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2.1引言 2.2脉冲编码调制 2.3增量调制 2.4时分复用和多路数字电话系统
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