External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

Rectifier Diode: Current vs Mounting area

Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating

Local or remote control Microprocessor controlled RS-232/RS-485 CAN Complete diode laser control Affordably priced and monitoring solution Air or water cooling( specify)

Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

8.1间接交流变流电路 8.2间接直流变流电路